Correlated effects of fluorine and hydrogen in fluorinated tin oxide (FTO) transparent electrodes deposited by sputtering at room temperature

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dc.contributor.author Morán Pedroso, María
dc.contributor.author Gago Fernández, Raúl
dc.contributor.author Julin, Jaakko
dc.contributor.author Salas Colera, Eduardo
dc.contributor.author Jiménez, Ignacio
dc.contributor.author De Andrés, Alicia
dc.contributor.author Prieto de Castro, Carlos Andrés
dc.date.accessioned 2022-11-03T09:37:57Z
dc.date.available 2023-01-30T00:00:06Z
dc.date.issued 2021-01-30
dc.identifier.bibliographicCitation Morán-Pedroso, M., Gago, R., Julin, J., Salas-Colera, E., Jimenez, I., de Andrés, A. & Prieto, C. (2021). Correlated effects of fluorine and hydrogen in fluorinated tin oxide (FTO) transparent electrodes deposited by sputtering at room temperature. Applied Surface Science, 537, 147906.
dc.identifier.issn 0169-4332
dc.identifier.uri http://hdl.handle.net/10016/35960
dc.description.abstract The optical and electrical properties of fluorinated tin oxide (FTO) films deposited at room temperature by sputtering have been investigated varying the fluorine content and the hydrogen atmosphere. The complex behavior of the obtained films is disclosed using a wide set of characterization techniques that reveals the combined effects of these two parameters on the generated defects. These defects control the electrical transport (carrier density, mobility and conductivity), the optical properties (band gap and defects-related absorption and photoluminescence) and finally promote the amorphization of the samples. H2 in the sputtering gas does not modify the H content in the films but induces the partial reduction of tin (from Sn4 to Sn2) and the consequent generation of oxygen vacancies with shallow energy levels close to the valence band. A variation of up to four orders of magnitude in electrical conductivity is reported in samples with the appropriate fluorine doping and hydrogen fraction in the sputtering gas, maintaining excellent optical transparency. Optimized room temperature grown electrodes reach sheet resistance ~20 Omega and transparency 90%. This room temperature deposition process enables film preparation on flexible organic substrates, such as polyethylene terephthalate (PET), with identical performance of doubtless interest in flexible and large scale electronics.
dc.description.sponsorship We would like to thank IDIVAL for financial support, Projects N°NVAL16/17, INNVAL19/18 and NVAL18/07. CRL thanks the MINECO for the Juan de la Cierva Formación grant (ref. FJCI-2015-25306). This work has been supported by the Spanish MINECO, Instituto de Salud Carlos III, the European Union FEDER funds under Projects ref. PI16/00496 (AES 2016), PI19/00349 and DTS19/00033 (AES 2019). The authors are grateful to Dr F Madrazo and the Laser Microscopy Unit of the IDIVAL Institute for the use of the Confocal Raman Imaging Microscope.
dc.format.extent 7
dc.language.iso eng
dc.publisher Elsevier
dc.rights © 2020 Elsevier B.V. All rights reserved.
dc.rights Atribución-NoComercial-SinDerivadas 3.0 España
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject.other Transparent conductive materials
dc.subject.other Fluorinated tin oxide
dc.subject.other Room temperature film preparation
dc.title Correlated effects of fluorine and hydrogen in fluorinated tin oxide (FTO) transparent electrodes deposited by sputtering at room temperature
dc.type research article
dc.subject.eciencia Química
dc.identifier.doi 10.1016/j.apsusc.2020.147906
dc.rights.accessRights open access
dc.relation.projectID Gobierno de España. FJCI-2015-25306
dc.identifier.publicationfirstpage 1
dc.identifier.publicationlastpage 7
dc.identifier.publicationtitle Applied Surface Science
dc.identifier.publicationvolume 537
dc.identifier.uxxi AR/0000026982
dc.contributor.funder Ministerio de Economía y Competitividad (España)
dc.affiliation.dpto UC3M. Departamento de Física
dc.affiliation.grupoinv UC3M. Grupo de Investigación: Materiales avanzados para aplicaciones en energía solar
dc.type.hasVersion AM
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