MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure

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dc.contributor.author Steidl, Matthias
dc.contributor.author Schwarzburg, Klaus
dc.contributor.author Galiana Blanco, Beatriz
dc.contributor.author Kups, Thomas
dc.contributor.author Supplie, Oliver
dc.contributor.author Kleinschmidt, Peter
dc.contributor.author Lilienkamp, Gerhard
dc.contributor.author Hannappel, T
dc.date.accessioned 2022-09-01T09:44:26Z
dc.date.available 2022-09-01T09:44:26Z
dc.date.issued 2019-07-26
dc.identifier.bibliographicCitation Steidl, M., Schwarzburg, K., Galiana, B., Kups, T., Supplie, O., Kleinschmidt, P., Lilienkamp, G., & Hannappel, T. (2019). MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure. In Nanotechnology, 30(10), 104002-104010.
dc.identifier.issn 0957-4484
dc.identifier.uri http://hdl.handle.net/10016/35622
dc.description.abstract Dilute nitride III-V nanowires (NWs) possess great potential as building blocks in future optoelectronical and electrochemical devices. Here, we provide evidence for the growth of GaP/GaPN core-shell NWs via metalorganic vapor phase epitaxy, both on GaP(111)B and on GaP/Si (111) hetero-substrates. The NW morphology meets the common needs for use in applications, i.e. they are straight and vertically oriented to the substrate as well as homogeneous in length. Moreover, no parasitical island growth is observed. Nitrogen was found to be incorporated on group V sites as determined from transmission electron microscopy (TEM) and Raman spectroscopy. Together with the incorporation of N, the NWs exhibit strong photoluminescence in the visible range, which we attribute to radiative recombination at N-related deep states. Independently of the N incorporation, a peculiar facet formation was found, with {110} facets at the top and {112} at the bottom of the NWs. TEM reveals that this phenomenon is related to different stacking fault densities within the zinc blende structure, which lead to different effective surface energies for the bottom and the top of the NWs.
dc.description.sponsorship This work was supported by the Deutsche Forschungsgemeinschaft (DFG, proj. no. HA 3096/4-2 & DA 396/6-2). We thank D Roßberg and D Flock for preparation of the TEM lamellae via FIB, as well as A Müller for technical support of the MOVPE system and W Dziony for AES measurements. We appreciate fruitful discussions with A Paszuk and A Nägelein.
dc.format.extent 8
dc.language.iso eng
dc.publisher Nanotechnology
dc.rights © 2019 IOP Publishing Ltd
dc.rights Atribución-NoComercial-SinDerivadas 3.0 España
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject.other Iii-V on silicon
dc.subject.other Nanowires
dc.subject.other Dilute nitride
dc.subject.other Movpe
dc.subject.other Facet formation
dc.subject.other Optical spectroscopy
dc.subject.other Liquid-solid growth
dc.subject.other Core/shell nanowires
dc.subject.other Band-gap
dc.subject.other Nitrogen
dc.subject.other Photoluminescence
dc.subject.other Scattering
dc.subject.other Evolution
dc.subject.other Alloys
dc.subject.other Energy
dc.title MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure
dc.type research article
dc.relation.publisherversion https://iopscience.iop.org/article/10.1088/1361-6528/aaf607
dc.subject.eciencia Física
dc.identifier.doi https://doi.org/10.1088/1361-6528/aaf607
dc.rights.accessRights open access
dc.identifier.publicationfirstpage 104002
dc.identifier.publicationissue 10
dc.identifier.publicationlastpage 104010
dc.identifier.publicationtitle NANOTECHNOLOGY
dc.identifier.publicationvolume 30
dc.identifier.uxxi AR/0000022987
dc.affiliation.dpto UC3M. Departamento de Física
dc.affiliation.grupoinv UC3M. Grupo de Investigación: Materiales avanzados para aplicaciones en energía solar
dc.type.hasVersion AM
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