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MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure

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dc.affiliation.dptoUC3M. Departamento de Físicaes
dc.affiliation.grupoinvUC3M. Grupo de Investigación: Materiales avanzados para aplicaciones en energía solares
dc.contributor.authorSteidl, Matthias
dc.contributor.authorSchwarzburg, Klaus
dc.contributor.authorGaliana Blanco, Beatriz
dc.contributor.authorKups, Thomas
dc.contributor.authorSupplie, Oliver
dc.contributor.authorKleinschmidt, Peter
dc.contributor.authorLilienkamp, Gerhard
dc.contributor.authorHannappel, T
dc.date.accessioned2022-09-01T09:44:26Z
dc.date.available2022-09-01T09:44:26Z
dc.date.issued2019-07-26
dc.description.abstractDilute nitride III-V nanowires (NWs) possess great potential as building blocks in future optoelectronical and electrochemical devices. Here, we provide evidence for the growth of GaP/GaPN core-shell NWs via metalorganic vapor phase epitaxy, both on GaP(111)B and on GaP/Si (111) hetero-substrates. The NW morphology meets the common needs for use in applications, i.e. they are straight and vertically oriented to the substrate as well as homogeneous in length. Moreover, no parasitical island growth is observed. Nitrogen was found to be incorporated on group V sites as determined from transmission electron microscopy (TEM) and Raman spectroscopy. Together with the incorporation of N, the NWs exhibit strong photoluminescence in the visible range, which we attribute to radiative recombination at N-related deep states. Independently of the N incorporation, a peculiar facet formation was found, with {110} facets at the top and {112} at the bottom of the NWs. TEM reveals that this phenomenon is related to different stacking fault densities within the zinc blende structure, which lead to different effective surface energies for the bottom and the top of the NWs.en
dc.description.sponsorshipThis work was supported by the Deutsche Forschungsgemeinschaft (DFG, proj. no. HA 3096/4-2 & DA 396/6-2). We thank D Roßberg and D Flock for preparation of the TEM lamellae via FIB, as well as A Müller for technical support of the MOVPE system and W Dziony for AES measurements. We appreciate fruitful discussions with A Paszuk and A Nägelein.en
dc.format.extent8
dc.identifier.bibliographicCitationSteidl, M., Schwarzburg, K., Galiana, B., Kups, T., Supplie, O., Kleinschmidt, P., Lilienkamp, G., & Hannappel, T. (2019). MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure. In Nanotechnology, 30(10), 104002-104010.en
dc.identifier.doihttps://doi.org/10.1088/1361-6528/aaf607
dc.identifier.issn0957-4484
dc.identifier.publicationfirstpage104002
dc.identifier.publicationissue10
dc.identifier.publicationlastpage104010
dc.identifier.publicationtitleNANOTECHNOLOGYen
dc.identifier.publicationvolume30
dc.identifier.urihttps://hdl.handle.net/10016/35622
dc.identifier.uxxiAR/0000022987
dc.language.isoengen
dc.publisherNanotechnologyen
dc.relation.publisherversionhttps://iopscience.iop.org/article/10.1088/1361-6528/aaf607en
dc.rights© 2019 IOP Publishing Ltden
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subject.ecienciaFísicaes
dc.subject.otherIii-V on siliconen
dc.subject.otherNanowiresen
dc.subject.otherDilute nitrideen
dc.subject.otherMovpeen
dc.subject.otherFacet formationen
dc.subject.otherOptical spectroscopyen
dc.subject.otherLiquid-solid growthen
dc.subject.otherCore/shell nanowiresen
dc.subject.otherBand-gapen
dc.subject.otherNitrogenen
dc.subject.otherPhotoluminescenceen
dc.subject.otherScatteringen
dc.subject.otherEvolutionen
dc.subject.otherAlloysen
dc.subject.otherEnergyen
dc.titleMOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structureen
dc.typeresearch article*
dc.type.hasVersionAM*
dspace.entity.typePublication
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