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Terahertz-induced oscillations in encapsulated graphene

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URI: https://hdl.handle.net/10016/38252
ISSN: 0370-1972
DOI: https://doi.org/10.1002/pssb.202200266
UXXI: AR/0000032950
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Terahertz_PSS-B_2023.pdf (990.45 KB)
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2023-05
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Wiley
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A theoretical study on the rise of photo-oscillations in the magnetoresistance of hexagonal boron nitride (hBN)-encapsulated graphene is presented. The previous radiation-driven electron orbit model devised to study the same oscillations, well-known as MIRO, in 2D semiconductor systems (GaAs/AlGaAS heterostructure) is used. It is obtained that these graphene platforms under radiation and a static magnetic field are sensitive to terahertz and far-infrared radiation. The power, temperature, and frequency dependences of the photo-oscillations are studied. For power dependence, it is predicted that for cleaner graphene and high enough power it is possible to observe zero-resistance states and a resonance peak.
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HBN-encapsulated graphene, Magnetoresistance, Terahertz-induced oscillations
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Iñarrea, J., & Platero, G. (2022). Terahertz‐Induced oscillations in encapsulated graphene. Physica Status Solidi B-basic Solid State Physics, 260(5), 2200266.
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