RT Journal Article
T1 Terahertz-induced oscillations in encapsulated graphene
A1 Iñarrea Las Heras, Jesús
A1 Platero, Gloria
AB A theoretical study on the rise of photo-oscillations in the magnetoresistance of hexagonal boron nitride (hBN)-encapsulated graphene is presented. The previous radiation-driven electron orbit model devised to study the same oscillations, well-known as MIRO, in 2D semiconductor systems (GaAs/AlGaAS heterostructure) is used. It is obtained that these graphene platforms under radiation and a static magnetic field are sensitive to terahertz and far-infrared radiation. The power, temperature, and frequency dependences of the photo-oscillations are studied. For power dependence, it is predicted that for cleaner graphene and high enough power it is possible to observe zero-resistance states and a resonance peak.
PB Wiley
SN 0370-1972
YR 2023
FD 2023-05
LK https://hdl.handle.net/10016/38252
UL https://hdl.handle.net/10016/38252
LA eng
NO This work is supported by the MINECO (Spain) under grant PID2020-117787GB-I00 and by the Madrid Government (Comunidad de Madrid-Spain) under the Multiannual Agreement with UC3M in the line of Excellence of University Professors (EPUC3M14), and in the context of the V PRICIT (Regional Programme of Research and Technological Innovation). We also acknowledge the CSIC Research Platform on Quantum Technologies PTI-00.
DS e-Archivo
RD 27 jul. 2024