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Terahertz-induced oscillations in encapsulated graphene

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dc.affiliation.dptoUC3M. Departamento de Físicaes
dc.contributor.authorIñarrea Las Heras, Jesús
dc.contributor.authorPlatero, Gloria
dc.contributor.funderComunidad de Madrides
dc.contributor.funderMinisterio de Asuntos Económicos y Transformación Digital (España)es
dc.date.accessioned2023-09-06T13:11:09Z
dc.date.available2023-09-06T13:11:09Z
dc.date.issued2023-05
dc.description.abstractA theoretical study on the rise of photo-oscillations in the magnetoresistance of hexagonal boron nitride (hBN)-encapsulated graphene is presented. The previous radiation-driven electron orbit model devised to study the same oscillations, well-known as MIRO, in 2D semiconductor systems (GaAs/AlGaAS heterostructure) is used. It is obtained that these graphene platforms under radiation and a static magnetic field are sensitive to terahertz and far-infrared radiation. The power, temperature, and frequency dependences of the photo-oscillations are studied. For power dependence, it is predicted that for cleaner graphene and high enough power it is possible to observe zero-resistance states and a resonance peak.en
dc.description.sponsorshipThis work is supported by the MINECO (Spain) under grant PID2020-117787GB-I00 and by the Madrid Government (Comunidad de Madrid-Spain) under the Multiannual Agreement with UC3M in the line of Excellence of University Professors (EPUC3M14), and in the context of the V PRICIT (Regional Programme of Research and Technological Innovation). We also acknowledge the CSIC Research Platform on Quantum Technologies PTI-00.en
dc.format.extent6
dc.identifier.bibliographicCitationIñarrea, J., & Platero, G. (2022). Terahertz‐Induced oscillations in encapsulated graphene. Physica Status Solidi B-basic Solid State Physics, 260(5), 2200266.en
dc.identifier.doihttps://doi.org/10.1002/pssb.202200266
dc.identifier.issn0370-1972
dc.identifier.publicationfirstpage2200266-1
dc.identifier.publicationissue5
dc.identifier.publicationlastpage2200266-6
dc.identifier.publicationtitlePhysica Status Solidi B-basic Solid State Physicsen
dc.identifier.publicationvolume260
dc.identifier.urihttps://hdl.handle.net/10016/38252
dc.identifier.uxxiAR/0000032950
dc.language.isoengen
dc.publisherWileyen
dc.relation.projectIDGobierno de España. PID2020-117787GB-I00es
dc.relation.projectIDComunidad de Madrid. EPUC3M14es
dc.relation.projectIDAT-2022es
dc.relation.projectID
dc.rights© 2022 The Authors.en
dc.rightsAtribución 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.subject.ecienciaFísicaes
dc.subject.otherHBN-encapsulated grapheneen
dc.subject.otherMagnetoresistanceen
dc.subject.otherTerahertz-induced oscillationsen
dc.titleTerahertz-induced oscillations in encapsulated grapheneen
dc.typeresearch article*
dc.type.hasVersionVoR*
dspace.entity.typePublication
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