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Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation

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dc.affiliation.dptoUC3M. Departamento de Tecnología Electrónicaes
dc.affiliation.grupoinvUC3M. Grupo de Investigación: Diseño Microelectrónico y Aplicaciones (DMA)es
dc.contributor.authorLindoso Muñoz, Almudena
dc.contributor.authorGarcía Valderas, Mario
dc.contributor.authorEntrena Arrontes, Luis Alfonso
dc.contributor.authorMorilla, Y.
dc.contributor.authorMartín Holgado, P.
dc.contributor.funderMinisterio de Economía y Competitividad (España)es
dc.date.accessioned2021-05-25T08:12:15Z
dc.date.available2021-05-25T08:12:15Z
dc.date.issued2018-08
dc.description.abstractThis paper analyzes the suitability of single-instruction multiple data (SIMD) extensions of current microprocessors under radiation environments. SIMD extensions are intended for software acceleration, focusing mostly in applications that require high computational effort, which are common in many fields such as computer vision. SIMD extensions use a dedicated coprocessor that makes possible packing several instructions in one single extended instruction. Applications that require high performance could benefit from the use of SIMD coprocessors, but their reliability needs to be studied. In this paper, NEON, the SIMD coprocessor of ARM microprocessors, has been selected as a case study to explore the behavior of SIMD extensions under radiation. Radiation experiments of ARM CORTEX-A9 microprocessors have been accomplished with the objective of determining how the use of this kind of coprocessor can affect the system reliability.en
dc.format.extent8
dc.identifier.bibliographicCitationLindoso, A., Garcia-Valderas, M., Entrena, L., Morilla, Y. & Martin-Holgado, P. (2018). Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation. IEEE Transactions on Nuclear Science, 65(8), pp. 1835–1842.en
dc.identifier.doihttps://doi.org/10.1109/TNS.2018.2823540
dc.identifier.issn0018-9499
dc.identifier.publicationfirstpage1835
dc.identifier.publicationissue8
dc.identifier.publicationlastpage1842
dc.identifier.publicationtitleIEEE Transactions on Nuclear Scienceen
dc.identifier.publicationvolume65es
dc.identifier.urihttps://hdl.handle.net/10016/32738
dc.identifier.uxxiAR/0000023857
dc.language.isoeng
dc.publisherIEEE
dc.relation.projectIDGobierno de España. ESP2015-68245-C4-1-Pes
dc.relation.projectIDGobierno de España. ESP2015-68245-C4-4-Pes
dc.rights© 2018, IEEE
dc.rights.accessRightsopen access
dc.subject.ecienciaElectrónicaes
dc.subject.otherARMen
dc.subject.otherFault toleranceen
dc.subject.otherNEONen
dc.subject.otherSingle instruction multiple data (SIMD)en
dc.subject.otherSoftware hardeningen
dc.titleEvaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiationen
dc.typeresearch article*
dc.type.hasVersionAM*
dspace.entity.typePublication
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