Publication: Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation
dc.affiliation.dpto | UC3M. Departamento de Tecnología Electrónica | es |
dc.affiliation.grupoinv | UC3M. Grupo de Investigación: Diseño Microelectrónico y Aplicaciones (DMA) | es |
dc.contributor.author | Lindoso Muñoz, Almudena | |
dc.contributor.author | García Valderas, Mario | |
dc.contributor.author | Entrena Arrontes, Luis Alfonso | |
dc.contributor.author | Morilla, Y. | |
dc.contributor.author | Martín Holgado, P. | |
dc.contributor.funder | Ministerio de Economía y Competitividad (España) | es |
dc.date.accessioned | 2021-05-25T08:12:15Z | |
dc.date.available | 2021-05-25T08:12:15Z | |
dc.date.issued | 2018-08 | |
dc.description.abstract | This paper analyzes the suitability of single-instruction multiple data (SIMD) extensions of current microprocessors under radiation environments. SIMD extensions are intended for software acceleration, focusing mostly in applications that require high computational effort, which are common in many fields such as computer vision. SIMD extensions use a dedicated coprocessor that makes possible packing several instructions in one single extended instruction. Applications that require high performance could benefit from the use of SIMD coprocessors, but their reliability needs to be studied. In this paper, NEON, the SIMD coprocessor of ARM microprocessors, has been selected as a case study to explore the behavior of SIMD extensions under radiation. Radiation experiments of ARM CORTEX-A9 microprocessors have been accomplished with the objective of determining how the use of this kind of coprocessor can affect the system reliability. | en |
dc.format.extent | 8 | |
dc.identifier.bibliographicCitation | Lindoso, A., Garcia-Valderas, M., Entrena, L., Morilla, Y. & Martin-Holgado, P. (2018). Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation. IEEE Transactions on Nuclear Science, 65(8), pp. 1835–1842. | en |
dc.identifier.doi | https://doi.org/10.1109/TNS.2018.2823540 | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.publicationfirstpage | 1835 | |
dc.identifier.publicationissue | 8 | |
dc.identifier.publicationlastpage | 1842 | |
dc.identifier.publicationtitle | IEEE Transactions on Nuclear Science | en |
dc.identifier.publicationvolume | 65 | es |
dc.identifier.uri | https://hdl.handle.net/10016/32738 | |
dc.identifier.uxxi | AR/0000023857 | |
dc.language.iso | eng | |
dc.publisher | IEEE | |
dc.relation.projectID | Gobierno de España. ESP2015-68245-C4-1-P | es |
dc.relation.projectID | Gobierno de España. ESP2015-68245-C4-4-P | es |
dc.rights | © 2018, IEEE | |
dc.rights.accessRights | open access | |
dc.subject.eciencia | Electrónica | es |
dc.subject.other | ARM | en |
dc.subject.other | Fault tolerance | en |
dc.subject.other | NEON | en |
dc.subject.other | Single instruction multiple data (SIMD) | en |
dc.subject.other | Software hardening | en |
dc.title | Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation | en |
dc.type | research article | * |
dc.type.hasVersion | AM | * |
dspace.entity.type | Publication |
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