Publication: Modeling heterogeneity and memory effects on the kinetic roughening of silica films grown by chemical vapor deposition
dc.affiliation.dpto | UC3M. Departamento de Matemáticas | es |
dc.affiliation.grupoinv | UC3M. Grupo de Investigación: Interdisciplinar de Sistemas Complejos (GISC) | es |
dc.contributor.author | Ojeda, Fernando | |
dc.contributor.author | Cuerno, Rodolfo | |
dc.contributor.author | Salvarezza, Roberto | |
dc.contributor.author | Agulló-Rueda, Fernando | |
dc.contributor.author | Vázquez Burgos, Luis | |
dc.date.accessioned | 2010-02-18T10:47:54Z | |
dc.date.available | 2010-02-18T10:47:54Z | |
dc.date.issued | 2003-06-15 | |
dc.description | 13 pages, 12 figures.-- PACS nrs.: 68.35.Ct, 81.15.Gh, 64.60.Ht, 05.10.Gg. | |
dc.description.abstract | We present discrete and continuum models to describe previous experiments on growth of chemical vapor deposited silica films at 611 K and 723 K [F. Ojeda et al., Phys. Rev. Lett. 84, 3125 (2000)]. Silica films deposited at 723 K show larger surface roughness already from the early stages of growth, a fact that was not explained by a previously proposed phenomenological stochastic equation for the interface height. This larger surface roughness and the concomitant development of higher local slopes seem to be correlated with the Kardar-Parisi-Zhang asymptotic scaling observed for the high-temperature conditions. Here, we explain these features on the basis of surface heterogeneity and short-range memory effects, which are assessed for our experimental system through spectroscopic measurements. By incorporating these effects into a random deposition model and related Langevin equations with correlated noise, we are able to account for the full set of experimental observations. | |
dc.description.sponsorship | This work has been performed within the CONICET-CSIC research program, and has been partially supported by Programa de Cooperación Científica con Iberoamérica (MEC), CAM Grant No. 7220-ED/082, and DGES Grants Nos. MAT97-0698-C04, PB96-0119, and BFM2000-0006. F.O. acknowledges financial support from CAM. | |
dc.description.status | Publicado | |
dc.format.mimetype | text/html | |
dc.identifier.bibliographicCitation | Physical Review B 67, 245416 (2003) | |
dc.identifier.doi | https://www.doi.org/10.1103/PhysRevB.67.245416 | |
dc.identifier.issn | 1098-0121 (Print) | |
dc.identifier.issn | 1550-235x (Online) | |
dc.identifier.uri | https://hdl.handle.net/10016/6916 | |
dc.language.iso | eng | |
dc.publisher | The American Physical Society | |
dc.relation.publisherversion | http://dx.doi.org/10.1103/PhysRevB.67.245416 | |
dc.rights | © The American Physical Society | |
dc.rights.accessRights | open access | |
dc.subject.eciencia | Matemáticas | |
dc.subject.other | [PACS] Interface structure and roughness | |
dc.subject.other | [PACS] Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.) | |
dc.subject.other | [PACS] Dynamic critical phenomena | |
dc.subject.other | [PACS] Stochastic analysis methods (Fokker-Planck, Langevin, etc.) | |
dc.title | Modeling heterogeneity and memory effects on the kinetic roughening of silica films grown by chemical vapor deposition | |
dc.type | research article | * |
dc.type.review | PeerReviewed | |
dspace.entity.type | Publication |
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