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Modeling heterogeneity and memory effects on the kinetic roughening of silica films grown by chemical vapor deposition

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dc.affiliation.dptoUC3M. Departamento de Matemáticases
dc.affiliation.grupoinvUC3M. Grupo de Investigación: Interdisciplinar de Sistemas Complejos (GISC)es
dc.contributor.authorOjeda, Fernando
dc.contributor.authorCuerno, Rodolfo
dc.contributor.authorSalvarezza, Roberto
dc.contributor.authorAgulló-Rueda, Fernando
dc.contributor.authorVázquez Burgos, Luis
dc.date.accessioned2010-02-18T10:47:54Z
dc.date.available2010-02-18T10:47:54Z
dc.date.issued2003-06-15
dc.description13 pages, 12 figures.-- PACS nrs.: 68.35.Ct, 81.15.Gh, 64.60.Ht, 05.10.Gg.
dc.description.abstractWe present discrete and continuum models to describe previous experiments on growth of chemical vapor deposited silica films at 611 K and 723 K [F. Ojeda et al., Phys. Rev. Lett. 84, 3125 (2000)]. Silica films deposited at 723 K show larger surface roughness already from the early stages of growth, a fact that was not explained by a previously proposed phenomenological stochastic equation for the interface height. This larger surface roughness and the concomitant development of higher local slopes seem to be correlated with the Kardar-Parisi-Zhang asymptotic scaling observed for the high-temperature conditions. Here, we explain these features on the basis of surface heterogeneity and short-range memory effects, which are assessed for our experimental system through spectroscopic measurements. By incorporating these effects into a random deposition model and related Langevin equations with correlated noise, we are able to account for the full set of experimental observations.
dc.description.sponsorshipThis work has been performed within the CONICET-CSIC research program, and has been partially supported by Programa de Cooperación Científica con Iberoamérica (MEC), CAM Grant No. 7220-ED/082, and DGES Grants Nos. MAT97-0698-C04, PB96-0119, and BFM2000-0006. F.O. acknowledges financial support from CAM.
dc.description.statusPublicado
dc.format.mimetypetext/html
dc.identifier.bibliographicCitationPhysical Review B 67, 245416 (2003)
dc.identifier.doihttps://www.doi.org/10.1103/PhysRevB.67.245416
dc.identifier.issn1098-0121 (Print)
dc.identifier.issn1550-235x (Online)
dc.identifier.urihttps://hdl.handle.net/10016/6916
dc.language.isoeng
dc.publisherThe American Physical Society
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.67.245416
dc.rights© The American Physical Society
dc.rights.accessRightsopen access
dc.subject.ecienciaMatemáticas
dc.subject.other[PACS] Interface structure and roughness
dc.subject.other[PACS] Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
dc.subject.other[PACS] Dynamic critical phenomena
dc.subject.other[PACS] Stochastic analysis methods (Fokker-Planck, Langevin, etc.)
dc.titleModeling heterogeneity and memory effects on the kinetic roughening of silica films grown by chemical vapor deposition
dc.typeresearch article*
dc.type.reviewPeerReviewed
dspace.entity.typePublication
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