Publication: Modeling heterogeneity and memory effects on the kinetic roughening of silica films grown by chemical vapor deposition
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ISSN: 1098-0121 (Print)
ISSN: 1550-235x (Online)
Publication date
2003-06-15
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The American Physical Society
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Abstract
We present discrete and continuum models to describe previous experiments on growth of chemical vapor deposited silica films at 611 K and 723 K [F. Ojeda et al., Phys. Rev. Lett. 84, 3125 (2000)]. Silica films deposited at 723 K show larger surface roughness already from the early stages of growth, a fact that was not explained by a previously proposed phenomenological stochastic equation for the interface height. This larger surface roughness and the concomitant development of higher local slopes seem to be correlated with the Kardar-Parisi-Zhang asymptotic scaling observed for the high-temperature conditions. Here, we explain these features on the basis of surface heterogeneity and short-range memory effects, which are assessed for our experimental system through spectroscopic measurements. By incorporating these effects into a random deposition model and related Langevin equations with correlated noise, we are able to account for the full set of experimental observations.
Description
13 pages, 12 figures.-- PACS nrs.: 68.35.Ct, 81.15.Gh, 64.60.Ht, 05.10.Gg.
Keywords
[PACS] Interface structure and roughness, [PACS] Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.), [PACS] Dynamic critical phenomena, [PACS] Stochastic analysis methods (Fokker-Planck, Langevin, etc.)
Bibliographic citation
Physical Review B 67, 245416 (2003)