Publication: Millimeter wave radiation-induced magnetoresistance oscillations in the high quality GaAs/AlGaAs 2D electron system under bichromatic excitation
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2017-05-01
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American Physical Society (APS)
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Abstract
Millimeter wave radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, R-xx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed R-xx response, as the higher frequency millimeter wave component determines the R-xx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.
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Zero-resistance states, Microwave-radiation, Heterostructures, Photoexcitation, Devices, Driven, Gas
Bibliographic citation
B. Gunawardana, H.-C. Liu, R. L. Samaraweera, M. S. Heimbeck, H. O. Everitt, J. Iñarrea, C. Reichl, W. Wegscheider, and R. G. Mani. Millimeter wave radiation-induced magnetoresistance oscillations in the high quality GaAs/AlGaAs 2D electron system under bichromatic excitation. Phys. Rev. B 95, 195304