RT Journal Article
T1 Millimeter wave radiation-induced magnetoresistance oscillations in the high quality GaAs/AlGaAs 2D electron system under bichromatic excitation
A1 Gunawardana, B.
A1 Liu, H. C.
A1 Samaraweera, R. L.
A1 Heimbeck, M. S.
A1 Everitt, H. O.
A1 Iñarrea Las Heras, Jesús
A1 Reichl, C.
A1 Wegscheider, W.
A1 Mani, R. G.
AB Millimeter wave radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, R-xx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed R-xx response, as the higher frequency millimeter wave component determines the R-xx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.
PB American Physical Society (APS)
SN 2469-9950
YR 2017
FD 2017-05-01
LK https://hdl.handle.net/10016/31764
UL https://hdl.handle.net/10016/31764
LA eng
DS e-Archivo
RD 1 sept. 2024