Publication:
Dynamics of rough interfaces in Chemical Vapor Deposition: experiments and model for silica films

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ISSN: 0031-9007 (Print)
ISSN: 1079-7114 (Online)
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2000-04-03
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The American Physical Society
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Abstract
We study the surface dynamics of silica films grown by low pressure chemical vapor deposition. Atomic force microscopy measurements show that the surface reaches a scale invariant stationary state compatible with the Kardar-Parisi-Zhang (KPZ) equation in three dimensions. At intermediate times the surface undergoes an unstable transient due to shadowing effects. By varying growth conditions and using spectroscopic techniques, we determine the physical origin of KPZ scaling to be a low value of the surface sticking probability, related to the surface concentration of reactive groups. We propose a stochastic equation that describes the qualitative behavior of our experimental system.
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4 pages, 5 figures.-- PACS nrs.: 68.55.Jk, 05.10.Gg, 64.60.Ht, 81.15.Gh.-- ArXiv pre-print available at: http://arxiv.org/abs/cond-mat/0003155
Final publisher version available Open Access at: http://gisc.uc3m.es/~cuerno/publ_list.html
Keywords
[PACS] Structure and morphology; thickness; crystalline orientation and texture, [PACS] Stochastic analysis methods (Fokker-Planck, Langevin, etc.), [PACS] Dynamic critical phenomena, [PACS] Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
Bibliographic citation
Physical Review Letters, 2000, vol. 84, n. 14, p. 3125-3128