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Simulations of optical reflectance in vertically aligned GaAs nanowires array: The effect of the geometrical structural parameters

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carlosiii.embargo.liftdate2024-08-15
carlosiii.embargo.terms2024-08-15
dc.affiliation.dptoUC3M. Departamento de Físicaes
dc.contributor.authorCruz Fernández, Rosa María de la
dc.contributor.authorKanyinda-Malu, C.
dc.contributor.authorMuñoz Santiuste, Juan Enrique
dc.contributor.funderComunidad de Madrides
dc.contributor.funderMinisterio de Ciencia e Innovación (España)es
dc.date.accessioned2023-11-21T13:05:30Z
dc.date.issued2022-08-15
dc.description.abstractWe report the effects of radius-, length- and pitch-sizes on the optical reflectance of a periodic square array of GaAs nanowires embedded in epoxy. The simulated system is a multilayer array constituted by alternating layers of epoxy and an effective medium of GaAs nanowires embedded in epoxy. For both s- and p-polarizations, we observe an oscillating behavior in the reflectance spectra, as a consequence of interferences in periodical systems. We found that the radius- and pitch-sizes significantly affect the reflectance of GaAs nanowires array, while the length-sizes do not present evidence of changes in the optical reflectance. For higher radius, the number of oscillations increases and consequently, the peak-to-peak distance decreases. Besides, there is a red-shift of the reflectance for increasing radius. For higher pitch, the number of oscillations also increases, and a red-shift is observed. We obtain dependence laws for the peak-to-peak distance and red-shift versus radius and versus pitch. These dependences obey approximate quadratic relations. Attending to the reflectance dependence on the light incidence angle, we have found that for s-polarized light, the reflectance is higher with increasing angles, in comparison to p-polarized light cases, independently of the radius and pitch values. For both polarizations, we found that the reflectance is increasing for greater radii and smaller pitches, independently of the incident angle.en
dc.description.sponsorshipThis work is partially supported by Spanish MICINN under grant RTI 2018-101020-B-I00 and TECHNOFUSION III CM-S2018IEMAT-4437. This work has also been supported by Comunidad de Madrid under the agreement with UC3M in the line of Excellence of University Professors (EPUC3M14).en
dc.format.extent7
dc.identifier.bibliographicCitationDe La Cruz, R., Kanyinda‐Malu, C., & Muñoz Santiuste, J. E. (2022). Simulations of optical reflectance in vertically aligned GAAS Nanowires Array: The effect of the geometrical structural parameters. Physica B: Condensed Matter, 639, 413963.en
dc.identifier.doihttps://doi.org/10.1016/j.physb.2022.413963
dc.identifier.issn0921-4526
dc.identifier.publicationfirstpage1
dc.identifier.publicationissue413963
dc.identifier.publicationlastpage7
dc.identifier.publicationtitlePhysica B: Condensed Matteren
dc.identifier.publicationvolume639
dc.identifier.urihttps://hdl.handle.net/10016/38925
dc.identifier.uxxiAR/0000031426
dc.language.isoengen
dc.publisherElsevieren
dc.relation.projectIDComunidad de Madrid. S2018/EMT-4437es
dc.relation.projectIDGobierno de España. RTI2018-101020-B-I00es
dc.relation.projectIDComunidad de Madrid. EPUC3M14es
dc.rights© 2022 Elsevier B.V.es
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsembargoed accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subject.ecienciaFísicaes
dc.subject.otherGeometrical effectsen
dc.subject.otherReflectanceen
dc.subject.otherGaAS nanowires arrayen
dc.subject.otherTransfer matrix formalismen
dc.subject.otherMaxwell-Garnett effective modelen
dc.titleSimulations of optical reflectance in vertically aligned GaAs nanowires array: The effect of the geometrical structural parametersen
dc.typeresearch article*
dc.type.hasVersionAM*
dspace.entity.typePublication
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