Publication: Improved optoelectronic properties of nanostructured Eu doped Bi2S3 thin films for the detection of UV light
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2022-10
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MDPI
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Abstract
Due to a suitable band gap and high light absorption behavior, Bi2S3 is showing major success in photo-to-current conversion applications. In this current work, the authors used a low-cost nebulizer spray pyrolysis method to create nano-sized pure and unique Eu contents (1-5 wt.%)-loaded Bi2S3 thin layers by taking bismuth nitrate and thiourea as the source materials. The parent and Eu doped Bi2S3 thin films, deposited on a well-cleaned glass substrate at 350 °C, were analyzed using a variety of characterization approaches, including FESEM, EDS, XRD, PL, UV-Vis, and I-V, to describe the morphologies, compositions, crystallinity, defect states, band gap, and photodetection capability, respectively. The X-ray diffraction outcomes confirmed an orthorhombic polycrystalline structure for all Eu concentrations, and they were highly oriented along the (130) plane. Incorporation of Eu into the host matrix improves the intensity of all the peaks, and the crystallite size (25 nm) was found to be highest for the 3% Eu doped Bi2S3 thin film. The formation of a nanowire-like morphology was confirmed thorough field emission electron microscopy analysis, which is preferred for photo detectors. Upon excitation at 325 nm, grown pure and Eu doped Bi2S3 thin films indicated five emission peaks at 387, 418, 439, 480, and 523 nm, respectively. All the films showed significant absorption in the UV region, and importantly, a narrowing of the band gap is seen from 2.29 to 2.17 eV. Finally, the current-voltage characteristics of the pure and Eu doped Bi2S3 thin films were tested using silver contacts as electrodes. The results showed that the 3% Eu doped Bi2S3 sample showed a higher UV photocurrent characteristic, with high specific detectivity (1.82 × 1010 Jones), photoresponsivity (3.88 × 10-1 AW-1), external quantum efficiency (125%), and rapid photo response, as well as a recovery speed of 0.3 s and 0.4 s, due to the effective light absorption and photocarrier generation. We believe that our study may provide a cost-effective approach for UV photosensor applications.
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Eu loaded Bi2s3 thin layers, Higher UV photo response, Nanowire, Narrowing band gap, Nebulizer spray pyrolysis
Bibliographic citation
Shkir, M., Trabelsi, A. B. G., ALkallas, F. H., AlFaify, S., Sankapal, B. R., & Ubaidullah, M. (2022). Improved Optoelectronic Properties of Nanostructured Eu Doped Bi2S3 Thin Films for the Detection of UV Light. Crystals, 12(10), 1329