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Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation

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dc.affiliation.dptoUC3M. Departamento de Físicaes
dc.affiliation.dptoUC3M. Departamento de Matemáticases
dc.affiliation.grupoinvUC3M. Grupo de Investigación: Materiales avanzados para aplicaciones en energía solares
dc.affiliation.grupoinvUC3M. Grupo de Investigación: Interdisciplinar de Sistemas Complejos (GISC)es
dc.affiliation.institutoUC3M. Instituto Tecnológico de Química y Materiales Álvaro Alonso Barbaes
dc.contributor.authorMoreno-Barrado, Ana
dc.contributor.authorCañadas Castro, Mario
dc.contributor.authorGago, Raúl
dc.contributor.authorVázquez Burgos, Luis
dc.contributor.authorMuñoz-García, Javier
dc.contributor.authorRedondo-Cubero, Andrés
dc.contributor.authorGaliana Blanco, Beatriz
dc.contributor.authorBallesteros Pérez, Carmen Inés
dc.contributor.authorCuerno, Rodolfo
dc.date.accessioned2016-01-07T12:55:47Z
dc.date.available2016-01-07T12:55:47Z
dc.date.issued2015-04-13
dc.description.abstractA lack of universality with respect to ion species has been recently established in nanostructuring of semiconductor surfaces by low-energy ion-beam bombardment. This variability affects basic properties of the pattern formation process, like the critical incidence angle for pattern formation, and has remained unaccounted for. Here, we show that nonuniform generation of stress across the damaged amorphous layer induced by the irradiation is a key factor behind the range of experimental observations, as the form of the stress field is controlled by the ion/target combination. This effect acts in synergy with the nontrivial evolution of the amorphous-crystalline interface. We reach these conclusions by contrasting a multiscale theoretical approach, which combines molecular dynamics and a continuum viscous flow model, with experiments using Xe+ and Ar+ ions on a Si(100) target. Our general approach can apply to a variety of semiconductor systems and conditions.en
dc.description.sponsorshipThis work has been partially supported by MICINN (Spain) Grant MAT2011-13333-E, and MINECO (Spain) Grants FIS2012-38866-C05-01, FIS2012-38866-C05-05, FIS2013-47949-C2-2-P and FIS2012-32349. TEM work has been conducted at LABMET laboratory, associated with Red de Laboratorios of CAM, Spain. A.M.-B. acknowledges support from MINECO, through FPI scolarship BES-2010-036179. A.R.C. acknowledges funding from Juan de la Cierva program (Spain) under Contract No. JCI-2012-14509.en
dc.description.statusPublicado
dc.format.extent12
dc.format.mimetypeapplication/pdf
dc.identifier.bibliographicCitationPhysical Review B 91 (2015) 15,155303en
dc.identifier.doihttps://www.doi.org/10.1103/PhysRevB.91.155303
dc.identifier.issn1550-235X (online)
dc.identifier.issn1098-0121 (print)
dc.identifier.publicationfirstpage1
dc.identifier.publicationissue15, 155303
dc.identifier.publicationlastpage12
dc.identifier.publicationtitlePhysical Review Ben
dc.identifier.publicationvolume91
dc.identifier.urihttps://hdl.handle.net/10016/22128
dc.identifier.uxxiAR/0000017486
dc.language.isoeng
dc.publisherAmerican Physical Societyen
dc.relation.projectIDGobierno de España. FIS-2012-32349es
dc.relation.projectIDGobierno de España. FIS-2012-38866-C05-05es
dc.relation.projectIDGobierno de España. FIS-2013-47949-C2- 2es
dc.relation.projectIDGobierno de España. MAT-2011-13333-Ees
dc.relation.projectIDGobierno de España. FIS-2012-38866-C05-01es
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.91.155303
dc.rights© 2015 American Physical Societyen
dc.rights.accessRightsopen access
dc.subject.ecienciaFísicaes
dc.subject.ecienciaIngeniería Industriales
dc.subject.ecienciaMatemáticases
dc.subject.ecienciaMaterialeses
dc.titleNonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiationen
dc.typeresearch article*
dc.type.hasVersionVoR*
dspace.entity.typePublication
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