Publication: Ultra-Wideband Multi-Octave Planar Interconnect for Multi-Band THz Communications
dc.affiliation.dpto | UC3M. Departamento de Tecnología Electrónica | es |
dc.affiliation.grupoinv | UC3M. Grupo de Investigación: Optoelectrónica y Tecnología Láser (GOTL) | es |
dc.contributor.author | Iwamatsu, Shuya | |
dc.contributor.author | Ali, Muhsin | |
dc.contributor.author | Fernandez Estevez, Jose Luis | |
dc.contributor.author | Tebart, Jonas | |
dc.contributor.author | Kumar, Ashish | |
dc.contributor.author | Makhlouf, Sumer | |
dc.contributor.author | Carpintero del Barrio, Guillermo | |
dc.contributor.author | Stohr, Andreas | |
dc.contributor.funder | European Commission | en |
dc.date.accessioned | 2024-02-08T15:10:51Z | |
dc.date.available | 2024-02-08T15:10:51Z | |
dc.date.issued | 2023-08-01 | |
dc.description.abstract | An ultra-wideband (UWB) interconnect technology using indium phosphide (InP)-based transitions for coupling the output signals from terahertz (THz) photodiodes featuring coplanar waveguide (CPW) outputs to low-loss dielectric rod waveguides (DRWs) is presented. The motivation is to exploit the full bandwidth offered by THz photodiodes without limitations due to standard rectangular waveguide interfaces, e.g., for future high data rate THz communications. Full electromagnetic wave simulations are carried out to optimize the electrical performance of the proposed InP transitions in terms of operational bandwidth and coupling efficiency. The transitions are fabricated on 100-µm-thin InP and integrated with silicon (Si) DRWs. Experimental frequency domain characterizations demonstrate efficient THz signal coupling with a maximum coupling efficiency better than - 2 dB. The measured 3-dB and 6-dB operational bandwidths of 185 GHz and 280 GHz, respectively, prove the multi-octave ultra-wideband features of the developed interconnect technology. The 6-dB operational bandwidth covers all waveguide bands between WR-12 to WR-3, i.e., a frequency range between 60 and 340 GHz. In addition, the multi-octave performances of the fabricated interconnects were successfully exploited in proof-of-concept THz communication experiments. Using intermediate frequency orthogonal frequency division multiplexing (OFDM), THz communications are demonstrated for several frequency bands using the same interconnect. Considering soft-decision forward error correction, error-free transmission with data rates of 24 Gbps at 80 GHz and 8 Gbps at 310 GHz is achieved | en |
dc.description.sponsorship | Acknowledgements This work was supported by European Union’s Horizon 2020 Research and Innovation Programme under the Marie Skłodowska-Curie project, TERAOPTICS (grant No. 956857). University Duisburg-Essen acknowledges support from DFG under CRC/TRR 196 MARIE project C06 (Project-ID. 287022738) and BMBF under project 6GEM (grant No. 16KISK039). University of Carlos III of Madrid acknowledges support by the Research Executive Agency (REA) Grant Agreement No: 862788 (TERAmeasure project) under Horizon 2020 Excellent Science. The authors thank Mr. Daniel C. Gallego for the experiments at UC3M and Mr. Marcel Grzeslo, Mr. Thomas Haddad, and Mr. Tom Neerfeld for their help designing the photolithography mask and acknowledge support by the Open Access Publication Fund of the University of Duisburg-Essen. Author Contribution S. Iwamatsu wrote the main manuscript text and prepared all figures. All authors reviewed the manuscript. Funding Open Access funding enabled and organized by Projekt DEAL. European Union’s Horizon 2020 Research and Innovation Programme under the Marie Skodowska-Curie Actions (TERAOPTICS, grant No. 956857); Deutsche Forschungsgemeinschaft (Project-ID 287022738– CRC/TRR 196); Bundesministerium für Bildung und Forschung (6GEM, grant No.16KISK039); Research Executive Agency (TERAmeasure project, grant No: 862788). | en |
dc.description.status | Publicado | es |
dc.identifier.bibliographicCitation | Journal of Infrared, Millimeter, and Terahertz Waves, (2023), 44 (7-8), pp.:532–550 | en |
dc.identifier.doi | https://doi.org/10.1007/s10762-023-00926-1 | en |
dc.identifier.publicationfirstpage | 532 | |
dc.identifier.publicationissue | 7-8 | |
dc.identifier.publicationlastpage | 550 | |
dc.identifier.publicationtitle | Journal of Infrared, Millimeter, and Terahertz Waves | en |
dc.identifier.publicationvolume | 44 | |
dc.identifier.uri | https://hdl.handle.net/10016/39971 | en |
dc.identifier.uxxi | AR/0000033739 | |
dc.language.iso | eng | en |
dc.publisher | Springer | en |
dc.relation.projectID | info:eu-repo/granAgreement/EC/956857/TERAOPTICS | en |
dc.rights | © The Author(s) 2023 | en |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | en |
dc.rights.accessRights | open access | en |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | en |
dc.subject.eciencia | Electrónica | es |
dc.subject.other | Interconnect | en |
dc.subject.other | Terahertz | en |
dc.subject.other | Hybrid integration | en |
dc.subject.other | On-Chip communication | en |
dc.title | Ultra-Wideband Multi-Octave Planar Interconnect for Multi-Band THz Communications | en |
dc.type | research article | en |
dc.type.hasVersion | VoR | en |
dspace.entity.type | Publication |
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