Publication: Anisotropic scaling of ripple morphologies on high-fluence sputtered silicon
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ISSN: 1098-0121 (Print)
ISSN: 1550-235x (Online)
Publication date
2009-03-15
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The American Physical Society
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Abstract
The evolution of Si(100) surfaces has been studied during oblique high-fluence ion sputtering by means of atomic force microscopy. The observed surface morphology is dominated by nanoscale ripples and kinetic roughening at small and large lateral scales, respectively. The large-scale morphology exhibits anisotropic scaling at high fluences with different roughness exponents αn = 0.76 ± 0.04 and αp = 0.41 ± 0.04 in the directions normal and parallel to the incident ion beam, respectively. Comparison to the predictions of single field and two-field (“hydrodynamic”) models of ion erosion suggests the relevance of nonlinearities that are not considered in the simpler anisotropic Kuramoto-Sivashinsky equation.
Description
7 pages, 5 figures.-- PACS nrs.: 81.16.Rf, 68.37.Ps, 79.20.Rf, 81.65.Cf.
Keywords
[PACS] Micro- and nanoscale pattern formation, [PACS] Atomic force microscopy (AFM), [PACS] Atomic, molecular, and ion beam impact and interactions with surfaces, [PACS] Surface cleaning, etching, patterning
Bibliographic citation
Physical Review B 79, 115437 (2009)