RT Journal Article
T1 Anisotropic scaling of ripple morphologies on high-fluence sputtered silicon
A1 Keller, Adrian
A1 Cuerno, Rodolfo
A1 Facsko, Stefan
A1 Möller, Wolfhard
AB The evolution of Si(100) surfaces has been studied during oblique high-fluence ion sputtering by means of atomic force microscopy. The observed surface morphology is dominated by nanoscale ripples and kinetic roughening at small and large lateral scales, respectively. The large-scale morphology exhibits anisotropic scaling at high fluences with different roughness exponents αn = 0.76 ± 0.04 and αp = 0.41 ± 0.04 in the directions normal and parallel to the incident ion beam, respectively. Comparison to the predictions of single field and two-field (“hydrodynamic”) models of ion erosion suggests the relevance of nonlinearities that are not considered in the simpler anisotropic Kuramoto-Sivashinsky equation.
PB The American Physical Society
SN 1098-0121 (Print)
SN 1550-235x (Online)
YR 2009
FD 2009-03-15
LK https://hdl.handle.net/10016/6878
UL https://hdl.handle.net/10016/6878
LA eng
NO 7 pages, 5 figures.-- PACS nrs.: 81.16.Rf, 68.37.Ps, 79.20.Rf, 81.65.Cf.
NO This work was partially supported by MEC (Spain) through Grant No. FIS2006-12253-C06-01, by UC3M/CAM (Spain) through Grant No. CCG06-UC3M/ESP-0668, and by CAM (Spain) through Grant No. S-0505/ESP-0158.
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RD 29 jun. 2024