Publication: Nonlinear resonant tunnelling through double-barrier structures
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1995-03-13
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Elsevier
Abstract
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to
self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with thin barriers
simulated by 8-function potentials. This approximation allows for an analytical expression of the transmission probability
through the structure. We show that the typical peaks due to resonant tunneling decrease and broaden as non linearity increases.
The main conclusion is that nonlinear effects degrade the peak-to-valley ratio but improve the maximum operation frequency
of the resonant tunnelling devices.
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Bibliographic citation
Physics Letters A, vol. 198, n. 5-6, 13 mar. 1995. Pp. 403-406