RT Journal Article
T1 Nonlinear resonant tunnelling through double-barrier structures
A1 Diez, Enrique
A1 Domínguez-Adame, Francisco
A1 Sánchez, Angel
AB We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due toself-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with thin barrierssimulated by 8-function potentials. This approximation allows for an analytical expression of the transmission probabilitythrough the structure. We show that the typical peaks due to resonant tunneling decrease and broaden as non linearity increases.The main conclusion is that nonlinear effects degrade the peak-to-valley ratio but improve the maximum operation frequencyof the resonant tunnelling devices.
PB Elsevier
SN 0375-9601
YR 1995
FD 1995-03-13
LK https://hdl.handle.net/10016/15243
UL https://hdl.handle.net/10016/15243
LA eng
NO FD.-A. acknowledges support from UCM through project PR161193-4811. A.S. acknowledges partial support from e.1.e. y T. (Spain) through project PB92-0248 and from the European Union Human Capital and Mobility Programme through contract ERBCHRXCT930413.
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