Keller, AdrianCuerno, RodolfoFacsko, StefanMöller, Wolfhard2010-02-162010-02-162009-03-15Physical Review B 79, 115437 (2009)1098-0121 (Print)1550-235x (Online)https://hdl.handle.net/10016/68787 pages, 5 figures.-- PACS nrs.: 81.16.Rf, 68.37.Ps, 79.20.Rf, 81.65.Cf.The evolution of Si(100) surfaces has been studied during oblique high-fluence ion sputtering by means of atomic force microscopy. The observed surface morphology is dominated by nanoscale ripples and kinetic roughening at small and large lateral scales, respectively. The large-scale morphology exhibits anisotropic scaling at high fluences with different roughness exponents αn = 0.76 ± 0.04 and αp = 0.41 ± 0.04 in the directions normal and parallel to the incident ion beam, respectively. Comparison to the predictions of single field and two-field (“hydrodynamic”) models of ion erosion suggests the relevance of nonlinearities that are not considered in the simpler anisotropic Kuramoto-Sivashinsky equation.application/pdfeng© The American Physical Society[PACS] Micro- and nanoscale pattern formation[PACS] Atomic force microscopy (AFM)[PACS] Atomic, molecular, and ion beam impact and interactions with surfaces[PACS] Surface cleaning, etching, patterningAnisotropic scaling of ripple morphologies on high-fluence sputtered siliconresearch articleMatemáticashttps://www.doi.org/10.1103/PhysRevB.79.115437open access