Iñarrea Las Heras, JesúsPlatero, Gloria2023-09-062023-09-062023-05Iñarrea, J., & Platero, G. (2022). Terahertz‐Induced oscillations in encapsulated graphene. Physica Status Solidi B-basic Solid State Physics, 260(5), 2200266.0370-1972https://hdl.handle.net/10016/38252A theoretical study on the rise of photo-oscillations in the magnetoresistance of hexagonal boron nitride (hBN)-encapsulated graphene is presented. The previous radiation-driven electron orbit model devised to study the same oscillations, well-known as MIRO, in 2D semiconductor systems (GaAs/AlGaAS heterostructure) is used. It is obtained that these graphene platforms under radiation and a static magnetic field are sensitive to terahertz and far-infrared radiation. The power, temperature, and frequency dependences of the photo-oscillations are studied. For power dependence, it is predicted that for cleaner graphene and high enough power it is possible to observe zero-resistance states and a resonance peak.6eng© 2022 The Authors.Atribución 3.0 EspañaHBN-encapsulated grapheneMagnetoresistanceTerahertz-induced oscillationsTerahertz-induced oscillations in encapsulated grapheneresearch articleFísicahttps://doi.org/10.1002/pssb.202200266open access2200266-152200266-6Physica Status Solidi B-basic Solid State Physics260AR/0000032950