Lo, Mu ChiehGuzmán Martínez, Robinson CruzoeCarpintero del Barrio, Guillermo2019-05-082019-05-082018-07-09Optics Express (2018), 26(14), pp. 18386-183981094-4087https://hdl.handle.net/10016/28326In this paper, a monolithically integrated similar to 1.55 mu m semiconductor laser in the fourth harmonic colliding pulse mode locking configuration is reported. This device was developed within a multi-project wafer run at an InP-based active-passive generic foundry. The 1.66-mm Fabry-Perot cavity is formed with two on-chip reflector building blocks rather than cleaved facets. In the cavity, three absorber sections symmetrically divide the cavity in four gain segments. This laser diode is able to emit 100-GHz pulse trains with 500-fs pulse duration as well as two-tone emissions with a frequency separation of 2.7 THz. The dependence of the spectral behavior on the forward bias current for gain sections and the reverse bias voltage for absorber sections are experimentally demonstrated.12eng© 2018 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reservedMode-locked lasersSemiconductor lasersPhotonic integrated circuitsresearch articleElectrónicahttps://doi.org/10.1364/OE.26.018386open access183861418398Optics Express26AR/0000021865