Lo, Mu ChiehGuzmán Martínez, Robinson CruzoeCarpintero del Barrio, Guillermo2019-05-082019-05-082018-02-01Optics Letters, (2018), 43(3), pp. 507-510.0146-9592https://hdl.handle.net/10016/28334A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.4eng© 2017 Optical Society of AmericaMode-locked lasersSemiconductor lasersPhotonic integrated circuitsresearch articleElectrónicaÓpticahttps://doi.org/10.1364/OL.43.000507open access5073510Optics Letters43AR/0000020987