RT Journal Article
T1 Designing Hyperchaos and Intermittency in Semiconductor Superlattices
A1 Mompo Pavesi, Emanuel Gaston
A1 Carretero Cerrajero, Manuel
A1 López Bonilla, Luis Francisco
AB Weakly coupled semiconductor superlattices under dc voltage bias are excitable systems with many degrees of freedom that may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices. Superlattices with identical periods exhibit current self-oscillations due to the dynamics of charge dipole waves but chaotic oscillations exist on narrow voltage intervals. They disappear easily due to variation in structural growth parameters. Based on numerical simulations, we predict that inserting two identical sufficiently separated wider wells increases superlattice excitability by allowing wave nucleation at the modified wells and more complex dynamics. This system exhibits hyperchaos and varieties of intermittent chaos in extended dc voltage ranges. Unlike in ideal superlattices, our chaotic attractors are robust and resilient against noises and against controlled random disorder due to growth fluctuations.
PB American Physical Society
SN 0031-9007
YR 2021
FD 2021-08-27
LK https://hdl.handle.net/10016/33356
UL https://hdl.handle.net/10016/33356
LA eng
NO We acknowledge support by the FEDER/Ministerio de Ciencia, Innovación y Universidades-Agencia Estatal de Investigación Grants No. MTM2017-84446-C2-2-R and No. PID2020-112796RB-C22, by the Madrid Government (Comunidad de Madrid-Spain) under the Multiannual Agreement with UC3M in the line of Excellence of University Professors (EPUC3M23), and in the context of the V PRICIT (Regional Programme of Research and Technological Innovation).
DS e-Archivo
RD 27 jul. 2024