RT Conference Proceedings
T1 Energy dependence of the ripple wavelength for ion-beam sputtering of silicon: experiments and theory
A1 Cañadas Castro, Mario
A1 Gago, Raúl
A1 Muñoz-García, Javier
A1 Cuerno, Rodolfo
AB In spite of the efforts devoted for the last 20 years to elucidating ion-beam sputtering (IBS) as an instance ofsurface self-organization, the classic view on the main mechanism inducing the morphological instability has beenrecently challenged. We report on the verification of a recent theoretical description of this nanopattern formationprocess for semiconducting targets, as driven by stress-induced, viscous flow of a thin amorphous layer that develops atthe surface [M. Cuerno and R. Cuerno, Appl. Surf. Sci. 258, 4171 (2012)]. Through experiments on silicon as arepresentative case, we study the dependence of the ripple wavelength with the average ion energy, finding a lineardependence in the 0.3-1 keV range. This is explained within the viscous flow framework, taking into account the energydependence of the number of displaced atoms generated by collision cascades in the amorphous layer, as predicted byprevious models of ion-generated stress. For our analysis, we provide a systematic criterion to guarantee actual lineardynamics behavior, not affected by the onset of nonlinear effects that may influence the value of the ripple wavelength.
PB American Institute of Physics
SN 978-0-7354-1148-7
SN 1551-7616 (online)
SN 0094-243X (print)
YR 2012
FD 2012-08-05
LK https://hdl.handle.net/10016/22121
UL https://hdl.handle.net/10016/22121
LA eng
NO This proceeding at: 22nd International Conference on the Application of Accelerators in Research and Industry (CAARI), took place 2012-Auguts, 05-10, in Fort Worth (Texas).
NO Partial support has been provided by the Spanish MICINN Grants, Nos. FIS2009-12964-C05-01, -03, and -04, and MEC Grants, Nos. FIS2012-38866-C05-01 and -05, and FIS2012-32349.
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RD 4 may. 2024