RT Journal Article
T1 Spreading modulation for multi-level non-volatile memories
A1 Luo, Tianqiong
A1 Peleato Iñarrea, Borja Manuel
AB The aggressive scaling of NAND flash memories hascaused significant degradation in their reliability and endurance.One of the dominant factors in this degradation is the intercell-interference, by which the programming of a cell can affectnearby neighboring cells corrupting the information that theystore. This paper proposes a new data representation scheme,which increases endurance and significantly reduces the probability of error caused by inter-cell-interference. The method isbased on using an orthogonal code to spread each bit acrossmultiple cells, resulting in lower variance for the voltages beingprogrammed in the cells. This new data representation methodis also shown to present many of the advantages that spreadingsequences bring to wireless communications. For example, multiple information sequences can be written on the same cells atdifferent times without interfering with each other. It also allowsstoring additional information on an already programmed memory in such a way that the new information is hidden by thenoise.
PB IEEE
SN 0090-6778
YR 2016
FD 2016-03-01
LK https://hdl.handle.net/10016/35619
UL https://hdl.handle.net/10016/35619
LA eng
DS e-Archivo
RD 1 may. 2024