Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

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dc.contributor.author Gago, Raúl
dc.contributor.author Vázquez Burgos, Luis
dc.contributor.author Cuerno, Rodolfo
dc.contributor.author Varela, María
dc.contributor.author Ballesteros Pérez, Carmen Inés
dc.contributor.author Albella, José María
dc.date.accessioned 2010-02-18T11:06:58Z
dc.date.available 2010-02-18T11:06:58Z
dc.date.issued 2002-06
dc.identifier.bibliographicCitation Nanotechnology, 2002, vol. 13, n. 3, p. 304-308
dc.identifier.issn 0957-4484 (Print)
dc.identifier.issn 1361-6528 (Online)
dc.identifier.uri http://hdl.handle.net/10016/6917
dc.description 5 pages, 3 figures.-- PACS nrs.: 81.16.Rf, 81.65.Cf, 68.35.B-, 68.37.Lp, 68.37.Ps, 68.47.Fg.
dc.description.abstract We report on the production of nanoscale patterning on Si substrates by low-energy ion-beam sputtering. The surface morphology and structure of the irradiated surface were studied by atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM). Under ion irradiation at off-normal incidence angle (~50°), AFM images show the formation of both nanoripple and sawtooth-like structures for sputtering times longer than 20 min. The latter feature coarsens appreciably after 60 min of sputtering, inducing a large increase in the surface roughness. This behaviour is attributed to the preferential direction determined on the substrate by the ion beam for this incidence angle, leading to shadowing effects among surface features in the sputtering process. Under irradiation at normal incidence, the formation of an hexagonal array of nanodots is induced for irradiation times longer than 2 min. The shape and crystallinity of the nanodots were determined by HRTEM. At this incidence angle, the surface roughness is very low and remains largely unchanged even after 16 h of sputtering. For the two angle conditions studied, the formation of the corresponding surface structures can be understood as the interplay between an instability due to the sputtering yield dependence on the local surface curvature and surface smoothing processes such as surface diffusion.
dc.format.mimetype text/html
dc.language.iso eng
dc.publisher Institute of Physics
dc.rights © Institute of Physics
dc.subject.other [PACS] Nanoscale pattern formation
dc.subject.other [PACS] Surface cleaning, etching, patterning
dc.subject.other [PACS] Structure of clean surfaces (and surface reconstruction)
dc.subject.other [PACS] Transmission electron microscopy (TEM)
dc.subject.other [PACS] Atomic force microscopy (AFM)
dc.subject.other [PACS] Semiconductor surfaces
dc.title Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence
dc.type article
dc.type.review PeerReviewed
dc.description.status Publicado
dc.subject.eciencia Matemáticas
dc.identifier.doi https://www.doi.org/10.1088/0957-4484/13/3/313
dc.rights.accessRights openAccess
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