Growth dynamics of reactive-sputtering-deposited AlN films

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dc.contributor.author Auger, M. Angustias
dc.contributor.author Vázquez Roy, José Luis
dc.contributor.author Sánchez Garrido, Olga
dc.contributor.author Jergel, Matej
dc.contributor.author Cuerno, Rodolfo
dc.contributor.author Cañadas Castro, Mario
dc.date.accessioned 2010-02-17T15:43:53Z
dc.date.available 2010-02-17T15:43:53Z
dc.date.issued 2005-06-23
dc.identifier.bibliographicCitation Journal of Applied Physics 97, 123528 (2005)
dc.identifier.issn 0021-8979 (Print)
dc.identifier.issn 1089-7550 (Online)
dc.identifier.uri http://hdl.handle.net/10016/6910
dc.description 8 pages, 7 figures.-- PACS nrs.: 81.05.Ea, 68.47.Fg, 81.15.Cd, 68.55.Ac, 68.55.Jk, 68.35.Bs.-- Issue title: "Structural, mechanical, thermodynamical and optical properties of condensed matter".
dc.description.abstract We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α(loc)=1, β(loc)=0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.
dc.description.sponsorship Financial support from Spanish MCyT: Projects No. MAT 2002-04037-C03-03 and BFM 2003-07749-C05-01, BFM 2003-07749-C05-02, and BFM 2003-07749-C05-05, European Community: Project No. G5RD-CT-2000-00333, Slovak governmental Project No. 2003-SO 51/03R0600/01, and Slovak Grant Agency for Science VEGA, Project No. 2/3149/23, are acknowledged.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.publisher American Institute of Physics
dc.rights © American Institute of Physics
dc.subject.other Aluminium compounds
dc.subject.other III-V semiconductors
dc.subject.other Wide band gap semiconductors
dc.subject.other Semiconductor thin films
dc.subject.other Semiconductor growth
dc.subject.other Sputter deposition
dc.subject.other Surface roughness
dc.subject.other Atomic force microscopy
dc.subject.other X-ray diffraction (XRD)
dc.subject.other Domains
dc.title Growth dynamics of reactive-sputtering-deposited AlN films
dc.type article
dc.type.review PeerReviewed
dc.description.status Publicado
dc.relation.publisherversion http://dx.doi.org/10.1063/1.1937467
dc.subject.eciencia Matemáticas
dc.identifier.doi https://www.doi.org/10.1063/1.1937467
dc.rights.accessRights openAccess
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