Publication: Spreading modulation for multi-level non-volatile memories
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2016-03-01
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IEEE
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Abstract
The aggressive scaling of NAND flash memories has
caused significant degradation in their reliability and endurance.
One of the dominant factors in this degradation is the intercell-interference, by which the programming of a cell can affect
nearby neighboring cells corrupting the information that they
store. This paper proposes a new data representation scheme,
which increases endurance and significantly reduces the probability of error caused by inter-cell-interference. The method is
based on using an orthogonal code to spread each bit across
multiple cells, resulting in lower variance for the voltages being
programmed in the cells. This new data representation method
is also shown to present many of the advantages that spreading
sequences bring to wireless communications. For example, multiple information sequences can be written on the same cells at
different times without interfering with each other. It also allows
storing additional information on an already programmed memory in such a way that the new information is hidden by the
noise.
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Keywords
Memory signal processing, Nand flash memory, Modulation, Spreading sequence, Cdma
Bibliographic citation
Luo, T., & Peleato, B. (2016). Spreading Modulation for Multilevel Nonvolatile Memories. IEEE Transactions on Communications, 64(3), 1110–1119.