Imaging the scattering field of a single GaN nanowire

Abstract

In this work, a single gallium nitride (GaN) nanowire has been examined by our previously reported technique parametric indirect microscopic imaging (PIMI). Mapping of the nanoscale scattering signals from GaN nanowire has been achieved with PIMI system. A comparison with classical far field microscopy and FDTD simulations is included to show the relevant differences and the strength of this technique. In PIMI, highly defined modulated illumination, far field variation quantification, and filtering process resolve the nanoscale scattering field distribution in the form of polarization parameters. We believe that our system provides us a platform to understand the physics of these nanoscale scattering fields from optical nanoantennas.