Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation

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dc.contributor.author Lindoso Muñoz, Almudena
dc.contributor.author García Valderas, Mario
dc.contributor.author Entrena Arrontes, Luis Alfonso
dc.contributor.author Morilla, Y.
dc.contributor.author Martín Holgado, P.
dc.date.accessioned 2021-05-25T08:12:15Z
dc.date.available 2021-05-25T08:12:15Z
dc.date.issued 2018-08
dc.identifier.bibliographicCitation Lindoso, A., Garcia-Valderas, M., Entrena, L., Morilla, Y. & Martin-Holgado, P. (2018). Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation. IEEE Transactions on Nuclear Science, 65(8), pp. 1835–1842.
dc.identifier.issn 0018-9499
dc.identifier.uri http://hdl.handle.net/10016/32738
dc.description.abstract This paper analyzes the suitability of single-instruction multiple data (SIMD) extensions of current microprocessors under radiation environments. SIMD extensions are intended for software acceleration, focusing mostly in applications that require high computational effort, which are common in many fields such as computer vision. SIMD extensions use a dedicated coprocessor that makes possible packing several instructions in one single extended instruction. Applications that require high performance could benefit from the use of SIMD coprocessors, but their reliability needs to be studied. In this paper, NEON, the SIMD coprocessor of ARM microprocessors, has been selected as a case study to explore the behavior of SIMD extensions under radiation. Radiation experiments of ARM CORTEX-A9 microprocessors have been accomplished with the objective of determining how the use of this kind of coprocessor can affect the system reliability.
dc.format.extent 8
dc.language.iso eng
dc.publisher IEEE
dc.rights © 2018, IEEE
dc.subject.other ARM
dc.subject.other Fault tolerance
dc.subject.other NEON
dc.subject.other Single instruction multiple data (SIMD)
dc.subject.other Software hardening
dc.title Evaluation of the Suitability of NEON SIMD Microprocessor Extensions Under Proton Irradiation
dc.type article
dc.subject.eciencia Electrónica
dc.identifier.doi https://doi.org/10.1109/TNS.2018.2823540
dc.rights.accessRights openAccess
dc.relation.projectID Gobierno de España. ESP2015-68245-C4-1-P
dc.relation.projectID Gobierno de España. ESP2015-68245-C4-4-P
dc.type.version acceptedVersion
dc.identifier.publicationfirstpage 1835
dc.identifier.publicationissue 8
dc.identifier.publicationlastpage 1842
dc.identifier.publicationtitle IEEE Transactions on Nuclear Science
dc.identifier.publicationvolume 65
dc.identifier.uxxi AR/0000023857
dc.contributor.funder Ministerio de Economía y Competitividad (España)
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