Patrocinador:
Comunidad de Madrid European Commission Ministerio de Economía y Competitividad (España)
Agradecimientos:
European Union’s Horizon 2020 research and innovation programme
under the Marie Sklodowska-Curie grant agreement
No. 642355 FiWiN5G, Spanish Ministerio de Economia y Competitividad
DiDACTIC project (TEC2013-47753-C3-3-R), and
Consejería de Educación, Juventud y Deporte of Comunidad de
Madrid DIFRAGEOS project (P2013/ICE-3004).
Proyecto:
info:eu-repo/grant/Agreeement/EC/H2020/642355/FiWiN5G Gobierno de España. TEC2013-47753-C3-3-R/DiDACTIC Comunidad de Madrid. P2013/ICE-3004/DIFRAGEOS
A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.[+][-]