Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation

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dc.contributor.author Moreno-Barrado, Ana
dc.contributor.author Castro, Mario
dc.contributor.author Gago, Raúl
dc.contributor.author Vázquez, Luis
dc.contributor.author Muñoz-García, Javier
dc.contributor.author Redondo-Cubero, Andrés
dc.contributor.author Galiana Blanco, Beatriz
dc.contributor.author Ballesteros, Carmen
dc.contributor.author Cuerno, Rodolfo
dc.date.accessioned 2016-01-07T12:55:47Z
dc.date.available 2016-01-07T12:55:47Z
dc.date.issued 2015-04-13
dc.identifier.bibliographicCitation Physical Review B 91 (2015) 15,155303
dc.identifier.issn 1550-235X (online)
dc.identifier.issn 1098-0121 (print)
dc.identifier.uri http://hdl.handle.net/10016/22128
dc.description.abstract A lack of universality with respect to ion species has been recently established in nanostructuring of semiconductor surfaces by low-energy ion-beam bombardment. This variability affects basic properties of the pattern formation process, like the critical incidence angle for pattern formation, and has remained unaccounted for. Here, we show that nonuniform generation of stress across the damaged amorphous layer induced by the irradiation is a key factor behind the range of experimental observations, as the form of the stress field is controlled by the ion/target combination. This effect acts in synergy with the nontrivial evolution of the amorphous-crystalline interface. We reach these conclusions by contrasting a multiscale theoretical approach, which combines molecular dynamics and a continuum viscous flow model, with experiments using Xe+ and Ar+ ions on a Si(100) target. Our general approach can apply to a variety of semiconductor systems and conditions.
dc.description.sponsorship This work has been partially supported by MICINN (Spain) Grant MAT2011-13333-E, and MINECO (Spain) Grants FIS2012-38866-C05-01, FIS2012-38866-C05-05, FIS2013-47949-C2-2-P and FIS2012-32349. TEM work has been conducted at LABMET laboratory, associated with Red de Laboratorios of CAM, Spain. A.M.-B. acknowledges support from MINECO, through FPI scolarship BES-2010-036179. A.R.C. acknowledges funding from Juan de la Cierva program (Spain) under Contract No. JCI-2012-14509.
dc.format.extent 12
dc.format.mimetype application/pdf
dc.language.iso eng
dc.publisher American Physical Society
dc.rights © 2015 American Physical Society
dc.title Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation
dc.type article
dc.description.status Publicado
dc.relation.publisherversion http://dx.doi.org/10.1103/PhysRevB.91.155303
dc.subject.eciencia Física
dc.subject.eciencia Ingeniería Industrial
dc.subject.eciencia Matemáticas
dc.subject.eciencia Materiales
dc.identifier.doi 10.1103/PhysRevB.91.155303
dc.rights.accessRights openAccess
dc.relation.projectID Gobierno de España. FIS-2012-32349
dc.relation.projectID Gobierno de España. FIS-2012-38866-C05-05
dc.relation.projectID Gobierno de España. FIS-2013-47949-C2- 2
dc.relation.projectID Gobierno de España. MAT-2011-13333-E
dc.relation.projectID Gobierno de España. FIS-2012-38866-C05-01
dc.type.version publishedVersion
dc.identifier.publicationfirstpage 1
dc.identifier.publicationissue 15, 155303
dc.identifier.publicationlastpage 12
dc.identifier.publicationtitle Physical Review B
dc.identifier.publicationvolume 91
dc.identifier.uxxi AR/0000017486
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