Citation:
European Semiconductor Laser Workshop. Madrid, Spain, September 24-25th 2015: Abstract book. (pp. 51-52). Madrid: Universidad Carlos III de Madrid.
Sponsor:
This work was supported by Spanish Ministerio de Economía y Competitividad DiDACTIC project (TEC2013-47753-C3-3-R) and Consejería de Educación, Juventud y Deporte of Comunidad de Madrid DIFRAGEOS project (P2013/ICE-3004)
Rights:
Atribución-NoComercial-SinDerivadas 3.0 España
Abstract:
We report the demonstration of an optical-frequency comb generator based on a monolithically integrated ring laser. We have designed a device fabricated in a Multi-Project Wafer (MPW) run in an active/passive integration process from a generic building blocks.We report the demonstration of an optical-frequency comb generator based on a monolithically integrated ring laser. We have designed a device fabricated in a Multi-Project Wafer (MPW) run in an active/passive integration process from a generic building blocks. Chip fabrication has been carried out on the JePPIX technology platform, within the InP technology MPW run. A passive modelocked ring laser architecture is chosen, due to its ease of integration with other components to achieve photonic integrated circuits (PICs). The -10 dB span of the optical comb obtained is 8.75 nm (1.09 THz) with lines spaced by 10.1 GHz.[+][-]
Description:
Abstract of: European Semiconductor Laser Workshop. Madrid, Spain, September 24-25th 2015.