Self-consistent analysis of electric field effects on Si δ-doped GaAs

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Show simple item record Cuesta, José A. Sánchez, Angel Domínguez-Adame, Francisco 2012-09-11T15:21:30Z 2012-09-11T15:21:30Z 1995-10
dc.identifier.bibliographicCitation Semiconductor Science and Technology, vol. 10, n. 10, oct. 1995. Pp. 1303–1309
dc.identifier.issn 0268-1242 (print version)
dc.identifier.issn 1361-6641 (online version)
dc.description.abstract We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum well and subject to an electric field applied along the growth direction. We use an efficient self-consistent procedure to solve simultaneously the Schrodinger and Poisson equations for different values of electric field and temperature. We thus find the confining potential, the subband energies and their corresponding envelope functions, the subband occupations, and the oscillator strength of intersubband transitions. Opposite to what is usually the case when dealing with the quantum-confined Stark effect in ordinary quantum wells, we observe an abrupt drop of the energy levels whenever the external field reaches a certain value. This critical value of the field is seen to depend only slightly on temperature. The rapid change in the energy levels is accompanied by the appearance of a secondary well in the confining potential and a strong decrease of the oscillator strength between the two lowest subbands. These results open the possibility to design devices for use as optical filters controlled by an applied electric field.
dc.format.mimetype application/pdf
dc.language.iso eng
dc.publisher Institute of Physics
dc.rights Atribución-NoComercial-SinDerivadas 3.0 España
dc.title Self-consistent analysis of electric field effects on Si δ-doped GaAs
dc.type article
dc.description.status Publicado
dc.subject.eciencia Matemáticas
dc.identifier.doi 10.1088/0268-1242/10/10/002
dc.rights.accessRights openAccess
dc.type.version acceptedVersion
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