Publication:
Electron dynamics in intentionally disordered semiconductor superlattices

dc.affiliation.dptoUC3M. Departamento de Matemáticases
dc.affiliation.grupoinvUC3M. Grupo de Investigación: Interdisciplinar de Sistemas Complejos (GISC)es
dc.contributor.authorDiez, Enrique
dc.contributor.authorSánchez, Angel
dc.contributor.authorBerman, Gennady P.
dc.date.accessioned2012-09-12T12:18:45Z
dc.date.available2012-09-12T12:18:45Z
dc.date.issued1996-11-15
dc.description.abstractWe study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Domı´nguez-Adame et al. @Phys. Rev. B 51, 14 359 ~1994!#; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controlling the output band using a dc-electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work. [S0163-1829~96!02943-8]es
dc.description.sponsorshipWork at Legane´s and Madrid is supported by the Comisión Interministerial de Ciencia y Tecnología (CICyT, Spain) under Grant No. MAT95-0325. G. P. B. gratefully acknowledges partial support from Linkage Grant No. 93-1602 from NATO Special Programme Panel on Nanotechnology.es
dc.description.statusPublicadoes
dc.format.mimetypeapplication/pdf
dc.identifier.bibliographicCitationPhysical Review B, vol. 54, n. 20, 15 nov. 1996. Pp. 14550–14559es
dc.identifier.doi10.1103/PhysRevB.54.14550
dc.identifier.issn1098-0121 (print version)
dc.identifier.issn1550-235X (online version)
dc.identifier.urihttps://hdl.handle.net/10016/15305
dc.language.isoenges
dc.publisherAmerican Physical Societyes
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.54.14550
dc.rights.accessRightsopen accesses
dc.subject.ecienciaMatemáticases
dc.titleElectron dynamics in intentionally disordered semiconductor superlatticeses
dc.typeresearch article*
dc.type.hasVersionVoR*
dspace.entity.typePublication
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