Publication: High conductance in random superlattices with correlated disorder
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1996
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Elsevier
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Abstract
We study d.c. conductance of disordered GaAs-Gal_xAl,As superlattices where the disorder
is intentional and short-range correlated. We consider Gal _, Al,As layers of the same thickness, where
GaAs layers present two different thicknesses randomly distributed along the growth direction, with the
constraint that one of them always appears in pairs. A set of almost unscattered electron states is observed
in spite of the disorder, revealing itself through a distinct conductance maximum. Interestingly, this
maximum is also detected in imperfect superlattices, where interface roughness is taken into account by
allowing Quantum-well thicknesses to fluctuate around their nominal values. Our predictions can be used
to demonstrate experimentally that structural correlations inhibit the localization effects of disorder, even
in the presence of imperfections.
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Proceedings of: Seventh International Conference on Modulated Semiconductor Structures, 10–14 July 1995, Madrid
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Solid-State Electronics, vol. 40, n. 1-8, 1996 Pp. 433-436