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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10016/6932
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| Title: | Production of ordered silicon nanocrystals by low-energy ion sputtering |
| Author(s): | Gago, Raúl
Vázquez, Luis
Cuerno, Rodolfo
Varela, María
Ballesteros, Carmen
Albella, José María |
| Publisher: | American Institute of Physics |
| Issued date: | 21-May-2001 |
| Citation: | Applied Physics Letters 78, 3316 (2001) |
| URI: | http://hdl.handle.net/10016/6932 |
| ISSN: | 0003-6951 (Print)
1077-3118 (Online) |
| DOI: | 10.1063/1.1372358 |
| Description: | 3 pages, 3 figures.-- PACS nrs.: 81.16.Rf, 79.20.Rf, 68.66.Hb, 68.35.Ct.
ArXiv pre-print available at: http://arxiv.org/abs/cond-mat/0106542
Final publisher version available Open Access at: http://gisc.uc3m.es/~cuerno/publ_list.html |
| Abstract: | We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si (100) substrate with 1.2 keV Ar+ ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiation (up to 16 h) all dot characteristics remain largely unchanged and a small corrugation develops at long wavelengths. We interpret the formation of the dots as a result of an instability due to the sputtering yield dependence on the local surface curvature. |
| Sponsor: | This work has been partially supported by DGES (Spain) Grant Nos. MAT1999-0830-C03-01, MAT2000-0375-C02-02, and BFM2000-0006. |
| Review: | PeerReviewed |
| Publisher version: | http://dx.doi.org/10.1063/1.1372358 |
| Keywords: | Silicon
Semiconductor quantum dots
Nanostructured materials
Nanotechnology
Sputtering
Transmission electron microscopy
Atomic force microscopy
Surface structure
Elemental semiconductors
Short-range order |
| Rights: | © American Institute of Physics |
| Appears in Collections: | DM - GISC - Artículos de Revistas
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