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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10016/15245
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| Title: | Thomas-Fermi approach to resonant tunneling in δ-doped diodes |
| Author(s): | Diez, Enrique
Domínguez-Adame, Francisco
Sánchez, Angel |
| Publisher: | American Institute of Physics |
| Issued date: | 1-May-1995 |
| Citation: | Journal of Applied Physics, vol. 77, n. 9, 1 may. 1995. Pp. 4816-4818 |
| URI: | http://hdl.handle.net/10016/15245 |
| ISSN: | 0021-8979 (print version)
1089-7550 (online version) |
| DOI: | 10.1063/1.359404 |
| Abstract: | We study resonant tunneling in B-8-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diode. |
| Sponsor: | F. D.-A. acknowledges support from UCM through project PR 161/93-4811. A. S. acknowledges partial support from c.I.c. y T. (Spain) through project PB92-0248 and by the European Union Human Capital and Mobility Programme through contract ERBCHRXCT930413. |
| Publisher version: | http://dx.doi.org/10.1063/1.359404 |
| Appears in Collections: | DM - GISC - Artículos de Revistas
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